EPC2021ENGR

Obsolete

Efficient Power Conversion Corporation

TRANS GAN 80V 60A BUMPED DIE

Search across all available documentation for this part.

Obsolete

Efficient Power Conversion Corporation

TRANS GAN 80V 60A BUMPED DIE

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2021ENGR

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Die
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	Die
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 80 V 60A (Ta) Surface Mount Die

Technical documentation and resources