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CY7C199D-10VXIT

CY7C199D-10VXIT

Obsolete
INFINEON

SRAM, ASYNCHRONOUS SRAM, 256 KBIT, 32K X 8BIT, SOJ, 28 PINS, 4.5 V

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CY7C199D-10VXIT

CY7C199D-10VXIT

Obsolete
INFINEON

SRAM, ASYNCHRONOUS SRAM, 256 KBIT, 32K X 8BIT, SOJ, 28 PINS, 4.5 V

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Description

General part information

CY7C199D-10VXIT

CY7C199D-10VXIT is a high-performance CMOS static RAM organized as 32,768 words by 8-bits. Easy memory expansion is provided by an active LOW chip enable (active-low CE), an active LOW output enable (active-low OE) and tri-state drivers. This device has an automatic power-down feature, reducing the power consumption when deselected. The input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW). Write to the device by taking chip enable (active-low CE) and write enable (active-low WE) inputs LOW. Read from the device by taking chip enable (active-low CE) and output enable (active-low OE) LOW while forcing write enable (active-low WE) HIGH. The CY7C199D device is suitable for interfacing with processors that have TTL I/P levels.

Technical Specifications

Parameters and characteristics for this part

SpecificationCY7C199D-10VXIT
Access Time10 ns
Memory Depth32 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size32 kB
Memory TypeVolatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length0.3 in
Package Name28-BSOJ, 28-SOJ
Package Width7.62 mm
TechnologySRAM - Asynchronous
Voltage - Supply (Maximum)5.5 V
Voltage - Supply (Minimum)4.5 V
Write Cycle Time - Page10 ns
Write Cycle Time - Word10 ns

Pricing

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