Description
General part information
CY7C199D-10VXIT
CY7C199D-10VXIT is a high-performance CMOS static RAM organized as 32,768 words by 8-bits. Easy memory expansion is provided by an active LOW chip enable (active-low CE), an active LOW output enable (active-low OE) and tri-state drivers. This device has an automatic power-down feature, reducing the power consumption when deselected. The input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW). Write to the device by taking chip enable (active-low CE) and write enable (active-low WE) inputs LOW. Read from the device by taking chip enable (active-low CE) and output enable (active-low OE) LOW while forcing write enable (active-low WE) HIGH. The CY7C199D device is suitable for interfacing with processors that have TTL I/P levels.
Technical Specifications
Parameters and characteristics for this part
| Specification | CY7C199D-10VXIT |
|---|---|
| Access Time | 10 ns |
| Memory Depth | 32 K |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 32 kB |
| Memory Type | Volatile |
| Memory Width | 8 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.3 in |
| Package Name | 28-BSOJ, 28-SOJ |
| Package Width | 7.62 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 5.5 V |
| Voltage - Supply (Minimum) | 4.5 V |
| Write Cycle Time - Page | 10 ns |
| Write Cycle Time - Word | 10 ns |
Pricing
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