DMT10H032LFDF-13
ActiveDiodes Inc
100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT10H032LFDF-13
ActiveDiodes Inc
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMT10H032LFDF-13
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT10H032LFDF-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 6 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 11.9 nC |
| Input Capacitance (Ciss) (Max) | 683 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Package Name | U-DFN2020-6 (Type F) |
| Power Dissipation (Max) | 1.3 W |
| Rds On (Max) | 32 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources