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MICRON MT29F4G08ABADAWP-IT:D

MT29F1G08ABAEAWP:E

LTB
Micron Technology Inc.

FLASH MEMORY, SLC NAND, 1 GBIT, 128M X 8BIT, PARALLEL, TSOP-I, 48 PINS

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MICRON MT29F4G08ABADAWP-IT:D

MT29F1G08ABAEAWP:E

LTB
Micron Technology Inc.

FLASH MEMORY, SLC NAND, 1 GBIT, 128M X 8BIT, PARALLEL, TSOP-I, 48 PINS

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Description

General part information

MT29F1G08ABAEAWP:E

MT29F1G08ABAEAWP:E is a NAND flash device that includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, addresses, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip-enabled signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status.

Technical Specifications

Parameters and characteristics for this part

SpecificationMT29F1G08ABAEAWP:E
Memory Depth128 M
Memory FormatFLASH
Memory Interface (Type)Parallel
Memory Size1 Gbit
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)70 °C
Operating Temperature (Min)0 °C
Package Length0.724 "
Package Name48-TFSOP, 48-TSOP I
Package Width18.4 mm
TechnologyFLASH - NAND
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V

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