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INFINEON FF3MR12KM1HPHPSA1

FF3MR12KM1HHPSA1

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INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 190 A, 1.2 KV, 0.00444 OHM, MODULE

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INFINEON FF3MR12KM1HPHPSA1

FF3MR12KM1HHPSA1

Active
INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 190 A, 1.2 KV, 0.00444 OHM, MODULE

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Description

General part information

FF3MR12KM1HHPSA1

62 mmCoolSiC™ MOSFEThalf bridge module 1200 V, 2.9 mΩ G1 in the well known 62mm housing combined with M1H chip technology. Also available with pre-appliedThermal Interface Material(TIM)

Technical Specifications

Parameters and characteristics for this part

SpecificationFF3MR12KM1HHPSA1
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesHalf Bridge
Current - Continuous Drain (Id) (Tc)190 A
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Max)800 nC
Input Capacitance (Ciss) (Max)24200 pF, 24200 pF
Mounting TypeChassis Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseModule
Package NameAG-62MMHB
Rds On (Max)4.44 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max)5.1 V

Pricing

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CAD

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