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GS0650306LLMRXUMA1

GS0650306LLMRXUMA1

LTB
INFINEON

GAN POWER TRANSISTOR

Find alt
GS0650306LLMRXUMA1

GS0650306LLMRXUMA1

LTB
INFINEON

GAN POWER TRANSISTOR

Find alt

Description

General part information

GS0650306LLMRXUMA1

GAN POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationGS0650306LLMRXUMA1
Current - Continuous Drain (Id) (Tc)40 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)6 V
FET TypeN-Channel
Gate Charge (Max)6.7 nC
Input Capacitance (Ciss) (Max)235 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerSFN
Package NameToll
Rds On (Max)58 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Negative-10 V
Vgs (Max) Positive7 V
Vgs(th) (Max)2.6 V

Pricing

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CAD

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Documents

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