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IAUTN06S5N008TATMA1

IAUTN06S5N008TATMA1

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INFINEON

IAUTN06S5N008T IS AN AUTOMOTIVE MOSFET WITH 60 V, N-CH, 0,79MΩ MAX, TOLT PACKAGE, FEATURING INFINEON’S OPTIMOS™ 5 TECHNOLOGY FOR HV-LV DCDC CONVERTERS.

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IAUTN06S5N008TATMA1

IAUTN06S5N008TATMA1

Active
INFINEON

IAUTN06S5N008T IS AN AUTOMOTIVE MOSFET WITH 60 V, N-CH, 0,79MΩ MAX, TOLT PACKAGE, FEATURING INFINEON’S OPTIMOS™ 5 TECHNOLOGY FOR HV-LV DCDC CONVERTERS.

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Description

General part information

IAUTN06S5N008TATMA1

The IAUTN06S5N008T is a 0,79 mΩ, topside-cooled 60 V MOSFET coming in the TOLT package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter.

Technical Specifications

Parameters and characteristics for this part

SpecificationIAUTN06S5N008TATMA1
Current - Continuous Drain (Id) (Ta)136 A
Current - Continuous Drain (Id) (Tj)350 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)7 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)273 nC, 273 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)20280 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case16-PowerSOP Module
Package NamePG-HDSOP-16-2
Power Dissipation (Max)358 W
QualificationAEC-Q101
Rds On (Max)0.79 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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Documents

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