IS43QR85120B-083RBLI
ActiveISSI, Integrated Silicon Solution Inc
DRAM CHIP DDR4 SDRAM 4GBIT 512M X 8 1.2V 78-PIN TWBGA
IS43QR85120B-083RBLI
ActiveISSI, Integrated Silicon Solution Inc
DRAM CHIP DDR4 SDRAM 4GBIT 512M X 8 1.2V 78-PIN TWBGA
Description
General part information
IS43QR85120B-083RBLI
DRAM CHIP DDR4 SDRAM 4GBIT 512M X 8 1.2V 78-PIN TWBGA
Technical Specifications
Parameters and characteristics for this part
| Specification | IS43QR85120B-083RBLI |
|---|---|
| Access Time | 19 ns |
| Clock Frequency | 1.2 GHz |
| Memory Depth | 512 M |
| Memory Format | DRAM |
| Memory Interface (Type) | POD |
| Memory Size | 4 Gbit |
| Memory Type | Volatile |
| Memory Width | 8 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 95 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 78-TFBGA |
| Package Length | 10 mm |
| Package Name | 78-TWBGA |
| Package Width | 14 mm |
| Technology | SDRAM - DDR4 |
| Voltage - Supply (Maximum) | 1.26 V |
| Voltage - Supply (Minimum) | 1.14 V |
| Write Cycle Time - Page | 15 ns |
| Write Cycle Time - Word | 15 ns |
Pricing
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