Specification	IMBG65R060M2H

Current - Continuous Drain (Id) (Tc)	34.9 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Input Capacitance (Ciss) (Max)	669 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	PG-TO263-7-12, D2PAK
Power Dissipation (Max)	148 W
Rds On (Max)	55 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-7 V
Vgs (Max) Positive	23 V
Vgs(th) (Max)	5.6 V

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