Description
General part information
IMBG120R220M1HXTMA1
The CoolSiC™ 1200 V, 220 mΩSiC MOSFETin a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMBG120R220M1HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 13 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9.4 nC |
| Input Capacitance (Ciss) (Max) | 312 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | PG-TO263-7-12, D2PAK |
| Power Dissipation (Max) | 83 W |
| Rds On (Max) | 294 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -15 V |
| Vgs (Max) Positive | 18 V |
| Vgs(th) (Max) | 5.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources