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RSD200N10TL

RSD200N10TL

Obsolete
Rohm Semiconductor

MOSFET N-CH 100V 20A CPT3

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RSD200N10TL

RSD200N10TL

Obsolete
Rohm Semiconductor

MOSFET N-CH 100V 20A CPT3

Find alt

Description

General part information

RSD200N10TL

MOSFET N-CH 100V 20A CPT3

Technical Specifications

Parameters and characteristics for this part

SpecificationRSD200N10TL
Current - Continuous Drain (Id) (Ta)20 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)48.5 nC
Input Capacitance (Ciss) (Max)2200 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameCPT3
Power Dissipation (Max)20 W
Rds On (Max)52 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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