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GT025N06AQ

GT025N06AQ

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Goford Semiconductor

MOSFET,N-CH,60V,175A,220W,TO-247

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GT025N06AQ

GT025N06AQ

Active
Goford Semiconductor

MOSFET,N-CH,60V,175A,220W,TO-247

Find alt

Description

General part information

GT025N06AQ

MOSFET,N-CH,60V,175A,220W,TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationGT025N06AQ
Current - Continuous Drain (Id) (Tc)175 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)10 V, 4.5 V
Drive Voltage (Min Rds On)4.5 V, 10 V
FET TypeN-Channel
Gate Charge (Max)70 nC
Input Capacitance (Ciss) (Max)5400 pF
Mounting TypeSurface Mount, Through Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247
Power Dissipation (Max)220 W, 220 W
Rds On (Max)2.5 mOhm, 2.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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