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NSV40300MDR2G

NSV40300MDR2G

Active
ON Semiconductor

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, DUAL PNP, 40 V, 6.0 A/ REEL

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NSV40300MDR2G

NSV40300MDR2G

Active
ON Semiconductor

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, DUAL PNP, 40 V, 6.0 A/ REEL

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Description

General part information

NSV40300MDR2G

ON Semiconductor e2 PowerEdge family of Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

Technical Specifications

Parameters and characteristics for this part

SpecificationNSV40300MDR2G
Current - Collector (Ic) (Max)3 A
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)180
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
PNP Count2
Power - Max653 mW
Transistor ConfigurationDual
Transistor TypePNP
Vce Saturation (Max)170 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

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CAD

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