Description
General part information
ISP20EP10LMXTSA1
OptiMOS™ P-Channel MOSFETs 100Vin SOT-223 package represents the new technology targeted forbattery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on)range and improves efficiency at low loads due to low Qg.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISP20EP10LMXTSA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 650 mA |
| Current - Continuous Drain (Id) (Tc) | 990 mA |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 3.5 nC |
| Input Capacitance (Ciss) (Max) | 170 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | PG-SOT223-4 |
| Power Dissipation (Max) | 4.2 W, 1.8 W |
| Rds On (Max) | 2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources