Description
General part information
IAUZN04S7L012ATMA1
MOSFET_(20V 40V)
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUZN04S7L012ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 199 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 55 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 3686 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSDSON-8-39 |
| Power Dissipation (Max) | 94 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 1.25 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) | 1.8 V |
Pricing
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CAD
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