BUZ32H3045AATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 200V 9.5A TO263-3

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Obsolete

Infineon Technologies

MOSFET N-CH 200V 9.5A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	BUZ32H3045AATMA1

Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	530 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Power Dissipation (Max)
Infineon Technologies BUZ32H3045AATMA1	530 pF	9.5 A	400 mOhm	10 V	Surface Mount	MOSFET (Metal Oxide)	N-Channel	20 V	200 V	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	PG-TO263-3-2	75 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 9.5A (Tc) 75W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources