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Description

General part information

TPCF8B01(TE85L,F,M

MOSFET P-CH 20V 2.7A VS-8

Technical Specifications

Parameters and characteristics for this part

SpecificationTPCF8B01(TE85L,F,M
Current - Continuous Drain (Id) (Ta)2.7 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Max)6 nC
Input Capacitance (Ciss) (Max)470 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseFlat Leads, 8-SMD
Package Length2.9 mm
Package NameVS-8
Package Width1.5 mm
Power Dissipation (Max)330 mW
Rds On (Max)110 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1.2 V

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