Description
General part information
BSC010N04LSATMA1
Infineon's 40V and 60V MOSFET product families feature not only the industry’s lowest RDS(on)but also a perfect switching behavior for fast switching applications. 15% lower RDS(on)and 31% lower figure of merit (RDS(on)x Qg) compared to alternative devices has been realized by advanced thin wafer technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC010N04LSATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 38 A |
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 95 nC |
| Input Capacitance (Ciss) (Max) | 6800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8 FL |
| Power Dissipation (Max) | 139 W, 2.5 W |
| Rds On (Max) | 1 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
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