IRFB4710PBF
ObsoleteIR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 14 MOHM;
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IRFB4710PBF
ObsoleteIR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 14 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFB4710PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 75 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6160 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 3.8 W, 200 W |
| Rds On (Max) @ Id, Vgs | 14 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IRFB4710 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Documents
Technical documentation and resources