Description
General part information
BAT1502LSE6433XTMA1
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 12 GHz.
Technical Specifications
Parameters and characteristics for this part
| Specification | BAT1502LSE6433XTMA1 |
|---|---|
| Capacitance | 0.23 pF |
| Current - Max | 110 mA |
| Diode Type | Schottky, Single |
| Operating Temperature | 150 °C |
| Package / Case | 0201 (0603 Metric) |
| Package Name | PG-TSSLP-2-3 |
| Power Dissipation (Max) | 100 mW |
| Resistance | 10 Ohm |
| Voltage - Peak Reverse (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources