1N8035-GA
ObsoleteGeneSiC Semiconductor
DIODE SIL CARB 650V 14.6A TO276
1N8035-GA
ObsoleteGeneSiC Semiconductor
DIODE SIL CARB 650V 14.6A TO276
Description
General part information
1N8035-GA
DIODE SIL CARB 650V 14.6A TO276
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N8035-GA |
|---|---|
| Capacitance | 1107 pF |
| Current - Average Rectified (Io) | 14.6 A |
| Current - Reverse Leakage | 5 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 250 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-276AA |
| Package Name | TO-276 |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.5 V |
Pricing
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