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AIMCQ120R040M1TXTMA1

AIMCQ120R040M1TXTMA1

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INFINEON

SIC_DISCRETE

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AIMCQ120R040M1TXTMA1

AIMCQ120R040M1TXTMA1

Active
INFINEON

SIC_DISCRETE

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Description

General part information

AIMCQ120R040M1TXTMA1

SIC_DISCRETE

Technical Specifications

Parameters and characteristics for this part

SpecificationAIMCQ120R040M1TXTMA1
Current - Continuous Drain (Id) (Tc)61 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On)18 V
Drive Voltage (Min Rds On)20 V
FET TypeN-Channel
Gate Charge (Max)43 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1264 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case22-PowerBSOP Module
Package NamePG-HDSOP-22
Power Dissipation (Max)341 W
QualificationAEC-Q101
Rds On (Max)50 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-10 V
Vgs (Max) Positive25 V
Vgs(th) (Max)5.1 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources