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G120N02D32

G120N02D32

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Goford Semiconductor

MOSFET N+N-CH 20V 26A 15W 11M(MA

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G120N02D32

G120N02D32

Active
Goford Semiconductor

MOSFET N+N-CH 20V 26A 15W 11M(MA

Find alt

Description

General part information

G120N02D32

MOSFET N+N-CH 20V 26A 15W 11M(MA

Technical Specifications

Parameters and characteristics for this part

SpecificationG120N02D32
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Tc)26 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Max)24 nC, 24 nC
Input Capacitance (Ciss) (Max)1120 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package Length3 mm
Package Name8-DFN
Package Width3 mm
Power - Max (Tc)15 W
Rds On (Max)11 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1.2 V

Pricing

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