
MPQ6700
ActiveMotorola
SMALL SIGNAL BIPOLAR TRANSISTOR
Deep-Dive with AI
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MPQ6700
ActiveMotorola
SMALL SIGNAL BIPOLAR TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MPQ6700 | 
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 mA | 
| Current - Collector Cutoff (Max) [Max] | 50 nA | 
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 70 | 
| Frequency - Transition | 200 MHz | 
| Mounting Type | Through Hole | 
| Operating Temperature [Max] | 150 °C | 
| Operating Temperature [Min] | -65 °C | 
| Package / Case | 14-DIP | 
| Package / Case [x] | 0.3 " | 
| Package / Case [y] | 7.62 mm | 
| Power - Max [Max] | 500 mW | 
| Supplier Device Package | TO-116 | 
| Transistor Type | 2 NPN, 2 PNP | 
| Vce Saturation (Max) @ Ib, Ic | 250 mV | 
| Voltage - Collector Emitter Breakdown (Max) | 40 V | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 410 | $ 0.73 | |
Description
General part information
MPQ6700
Bipolar (BJT) Transistor Array 2 NPN, 2 PNP 40V 200mA 200MHz 500mW Through Hole TO-116
Documents
Technical documentation and resources
No documents available