
MPQ6700
ActiveMotorola
SMALL SIGNAL BIPOLAR TRANSISTOR
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Search across all available documentation for this part.

MPQ6700
ActiveMotorola
SMALL SIGNAL BIPOLAR TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MPQ6700 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 mA |
| Current - Collector Cutoff (Max) [Max] | 50 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 70 |
| Frequency - Transition | 200 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | 14-DIP |
| Package / Case [x] | 0.3 " |
| Package / Case [y] | 7.62 mm |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | TO-116 |
| Transistor Type | 2 NPN, 2 PNP |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 410 | $ 0.73 | |
Description
General part information
MPQ6700
Bipolar (BJT) Transistor Array 2 NPN, 2 PNP 40V 200mA 200MHz 500mW Through Hole TO-116
Documents
Technical documentation and resources
No documents available