MJE200STU
ObsoleteON Semiconductor
5.0 A, 25 V NPN BIPOLAR POWER TRANSISTOR
MJE200STU
ObsoleteON Semiconductor
5.0 A, 25 V NPN BIPOLAR POWER TRANSISTOR
Description
General part information
MJE200STU
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJE200STU |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 45 |
| Frequency - Transition | 65 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Package Name | TO-126-3 |
| Power - Max | 15 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
Pricing
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CAD
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Documents
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