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2N2906AUB

2N2906AUB

Active
Microchip Technology

SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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2N2906AUB

2N2906AUB

Active
Microchip Technology

SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

Find alt

Description

General part information

2N2906 Series

This specification covers the performance requirements for PNP, silicon, switching 2N2906A and 2N2907A transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/291. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Technical Specifications

Parameters and characteristics for this part

Specification2N2906AUB
Current - Collector (Ic) (Max)0.6 mA
Current - Collector Cutoff (Max)50 nA
DC Current Gain (hFE) (Min)40
Mounting TypeSurface Mount
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseNo Lead, 3-SMD
Package NameUB
Power - Max0.5 W
Transistor TypePNP
Vce Saturation (Max)1.6 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

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Documents

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