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TO-251

APT13005DI-G1

Obsolete
Diodes Inc

INACTIVE DATASHEET ARCHIVE

Find alt
TO-251

APT13005DI-G1

Obsolete
Diodes Inc

INACTIVE DATASHEET ARCHIVE

Find alt

Description

General part information

APT13005DI-G1

Bipolar (BJT) Transistor NPN 450 V 4 A 4MHz 25 W Through Hole TO-251

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT13005DI-G1
Current - Collector (Ic) (Max)4 A
DC Current Gain (hFE) (Min)8
Frequency - Transition4 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Package NameTO-251
Power - Max25 W
Transistor TypeNPN
Vce Saturation (Max)900 mV
Voltage - Collector Emitter Breakdown (Max)450 V

Pricing

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CAD

3D models and CAD resources for this part