
APT13005DI-G1
ObsoleteDiodes Inc
INACTIVE DATASHEET ARCHIVE

APT13005DI-G1
ObsoleteDiodes Inc
INACTIVE DATASHEET ARCHIVE
Description
General part information
APT13005DI-G1
Bipolar (BJT) Transistor NPN 450 V 4 A 4MHz 25 W Through Hole TO-251
Technical Specifications
Parameters and characteristics for this part
| Specification | APT13005DI-G1 |
|---|---|
| Current - Collector (Ic) (Max) | 4 A |
| DC Current Gain (hFE) (Min) | 8 |
| Frequency - Transition | 4 MHz |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | TO-251 |
| Power - Max | 25 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 900 mV |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
Pricing
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CAD
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Documents
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