MURF8L60 C0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A ITO220AC

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	MURF8L60 C0G

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	65 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Reverse Recovery Time (trr)
Taiwan Semiconductor Corporation MURF8L60 C0G	8 A	5 µA	TO-220-2 Full Pack	Through Hole	1.3 V	600 V	Standard	ITO-220AC	175 ░C	-55 C	200 mA 500 ns	65 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 8A Through Hole ITO-220AC

Technical documentation and resources

No documents available