MJD112-001
ObsoleteON Semiconductor
2.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR
MJD112-001
ObsoleteON Semiconductor
2.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR
Description
General part information
MJD112-001
The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD112-001 |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 20 µA |
| DC Current Gain (hFE) (Min) | 1000 |
| Frequency - Transition | 25 MHz |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | IPAK |
| Power - Max | 1.75 W |
| Transistor Type | NPN, Darlington |
| Vce Saturation (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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CAD
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Documents
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