DG2001EDV-T1-GE3

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Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 1 1.6OHM 6TSOP

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Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 1 1.6OHM 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	DG2001EDV-T1-GE3

Charge Injection	8 pC
Crosstalk	-63 dB
Mounting Type	Surface Mount
Multiplexer/Demultiplexer Circuit	2:1
Number of Circuits	1
On-State Resistance (Max) [Max]	1.6 Ohms
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Supplier Device Package	6-TSOP
Switch Circuit	SPDT
Switch Time (Ton, Toff) (Max) [Max] [custom]	26 ns
Switch Time (Ton, Toff) (Max) [Max] [custom]	32 ns
Voltage - Supply, Single (V+) [Max]	5.5 V
Voltage - Supply, Single (V+) [Min]	1.8 V

Part	On-State Resistance (Max) [Max]	Supplier Device Package	Switch Circuit	Switch Time (Ton, Toff) (Max) [Max] [custom]	Switch Time (Ton, Toff) (Max) [Max] [custom]	Multiplexer/Demultiplexer Circuit	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Number of Circuits	Crosstalk	Voltage - Supply, Single (V+) [Min]	Voltage - Supply, Single (V+) [Max]	Charge Injection
Vishay General Semiconductor - Diodes Division DG2001EDV-T1-GE3	1.6 Ohms	6-TSOP	SPDT	26 ns	32 ns	2:1	Surface Mount	85 °C	-40 °C	SOT-23-6 Thin TSOT-23-6	1	-63 dB	1.8 V	5.5 V	8 pC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

1 Circuit IC Switch 2:1 1.6Ohm 6-TSOP

Technical documentation and resources