TN2404K-T1-E3

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Vishay Siliconix

MOSFET N-CH 240V 200MA SOT23-3

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Vishay Siliconix

MOSFET N-CH 240V 200MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	TN2404K-T1-E3

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	240 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	360 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

MOSFET N-CH 240V 200MA SOT23-3

Part	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Vishay Siliconix TN2404K-T1-E3	MOSFET (Metal Oxide)	360 mW	200 mA	20 V	10 V	2.5 V	SC-59, SOT-23-3, TO-236-3	-55 °C	150 °C	N-Channel	4 Ohm	2 V	Surface Mount	SOT-23-3 (TO-236)	240 V	8 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 240 V 200mA (Ta) 360mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources