Specification	RQ3L090GNTB

Current - Continuous Drain (Id) (Ta)	9 A
Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24.5 nC
Input Capacitance (Ciss) (Max)	1260 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Package Length	3.2 mm
Package Name	8-HSMT
Package Width	3 mm
Power Dissipation (Max)	2 W
Rds On (Max)	13.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.7 V

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