NSVEMT1DXV6T1G
ActiveON Semiconductor
BIPOLAR TRANSISTOR ARRAY, DUAL PNP, 60 V, 100 MA
NSVEMT1DXV6T1G
ActiveON Semiconductor
BIPOLAR TRANSISTOR ARRAY, DUAL PNP, 60 V, 100 MA
Description
General part information
NSVEMT1DXV6T1G
The Dual PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT¿563 which is designed for low power surface mount applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSVEMT1DXV6T1G |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 500 pA |
| DC Current Gain (hFE) (Min) | 120 |
| Frequency - Transition | 140 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-563, SOT-666 |
| Package Name | SOT-563 |
| PNP Count | 2 |
| Power - Max | 0.5 W |
| Transistor Configuration | Dual |
| Transistor Type | PNP |
| Vce Saturation (Max) | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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