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NVD5862NT4G-VF01

NVD5862NT4G-VF01

Active
ON Semiconductor

POWER MOSFET 60V, 98A, 5.7 MOHM, SINGLE N-CHANNEL, DPAK.

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NVD5862NT4G-VF01

NVD5862NT4G-VF01

Active
ON Semiconductor

POWER MOSFET 60V, 98A, 5.7 MOHM, SINGLE N-CHANNEL, DPAK.

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Description

General part information

NVD5862NT4G-VF01

Automotive Power MOSFET. 60V, 98A, 5.7 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationNVD5862NT4G-VF01
Current - Continuous Drain (Id) (Ta)18 A
Current - Continuous Drain (Id) (Tc)98 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)82 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)6000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power Dissipation (Max)4.1 W
QualificationAEC-Q101
Rds On (Max)5.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part