FDS8882
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 9A, 20.0MΩ
FDS8882
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 9A, 20.0MΩ
Description
General part information
FDS8882
The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDS8882 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 20 nC |
| Input Capacitance (Ciss) (Max) | 940 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) | 20 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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Documents
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