DMC67D8UFDBQ-13

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Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMC67D8UFDBQ-13

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	390 mA, 2.9 A
Drain to Source Voltage (Vdss)	60 V, 20 V
Gate Charge (Qg) (Max) @ Vgs	0.4 pC, 7.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	41 pF, 443 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	580 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4 Ohm, 0.072 Ohm
Supplier Device Package	U-DFN2020-6 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V, 1.25 V

Complementary Pair Enhancement Mode MOSFET

Part	Power - Max [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Qualification	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Configuration	Mounting Type	Technology	Supplier Device Package
Diodes Inc DMC67D8UFDBQ-13	580 mW	1.25 V 2.5 V	2.9 A 390 mA	0.4 pC 7.3 nC	AEC-Q101	6-UDFN Exposed Pad	41 pF 443 pF	20 V 60 V	Automotive	-55 °C	150 °C	0.072 Ohm 4 Ohm	N and P-Channel Complementary	Surface Mount	MOSFET (Metal Oxide)	U-DFN2020-6 (Type B)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.