KSC1008GTA
ObsoleteON Semiconductor
NPN EPITAXIAL SILICON TRANSISTOR
KSC1008GTA
ObsoleteON Semiconductor
NPN EPITAXIAL SILICON TRANSISTOR
Description
General part information
KSC1008GTA
Bipolar (BJT) Transistor NPN 60 V 700 mA 50MHz 800 mW Through Hole TO-92-3
Technical Specifications
Parameters and characteristics for this part
| Specification | KSC1008GTA |
|---|---|
| Current - Collector (Ic) (Max) | 700 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 200 |
| Frequency - Transition | 50 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-92-3 (TO-226AA) Formed Leads, TO-226-3 |
| Package Name | TO-92-3 |
| Power - Max | 800 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) | 400 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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CAD
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Documents
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