NTHL015N065SC1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 163 A, 650 V, 0.012 OHM, TO-247
NTHL015N065SC1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 163 A, 650 V, 0.012 OHM, TO-247
Description
General part information
NTHL015N065SC1
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTHL015N065SC1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 163 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 283 nC |
| Input Capacitance (Ciss) (Max) | 4790 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power Dissipation (Max) | 643 W |
| Rds On (Max) | 18 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 4.3 V |
Pricing
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