DS1258AB-100

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Analog Devices Inc./Maxim Integrated

IC NVSRAM 2MBIT PARALLEL 40EDIP

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Active

Analog Devices Inc./Maxim Integrated

IC NVSRAM 2MBIT PARALLEL 40EDIP

Technical Specifications

Parameters and characteristics for this part

Specification	DS1258AB-100

Access Time	100 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Size	2 Gbit
Memory Type	Non-Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	0.61 "
Package / Case	40-DIP Module
Package / Case	15.495 mm
Supplier Device Package	40-EDIP
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	5.25 V
Voltage - Supply [Min]	4.75 V
Write Cycle Time - Word, Page [custom]	100 ns
Write Cycle Time - Word, Page [custom]	100 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

IC NVSRAM 2MBIT PARALLEL 40EDIP

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Supplier Device Package	Memory Interface	Memory Size	Mounting Type	Access Time	Memory Format	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Package / Case	Package / Case	Package / Case	Memory Type
Analog Devices Inc./Maxim Integrated DS1258AB-100	4.75 V	5.25 V	70 °C	0 °C	NVSRAM (Non-Volatile SRAM)	40-EDIP	Parallel	2 Gbit	Through Hole	100 ns	NVSRAM	100 ns	100 ns	0.61 "	40-DIP Module	15.495 mm	Non-Volatile

General part information

NVSRAM (Non-Volatile SRAM) Memory IC 2Mbit Parallel 100 ns 40-EDIP

Technical documentation and resources