FCB099N65S3
ActivePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 30 A, 99 MΩ, D2PAK
FCB099N65S3
ActivePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 30 A, 99 MΩ, D2PAK
Description
General part information
FCB099N65S3
SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Technical Specifications
Parameters and characteristics for this part
| Specification | FCB099N65S3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 30 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 61 nC |
| Input Capacitance (Ciss) (Max) | 2480 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263 (D2PAK) |
| Power Dissipation (Max) | 227 W |
| Rds On (Max) | 99 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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