
DMP3006LPSWQ-13
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET

DMP3006LPSWQ-13
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMP3006LPSWQ Series
This new generation MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power-management and load switch.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP3006LPSWQ-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15 A |
| Current - Continuous Drain (Id) (Tc) | 92 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 106 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 5639 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PowerDI5060-8 (Type UX) |
| Power Dissipation (Max) | 1.6 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 7.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.1 V |
Pricing
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CAD
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Documents
Technical documentation and resources