NVGS5120PT1G
ActiveON Semiconductor
POWER MOSFET, P CHANNEL, 60 V, 2.5 A, 0.072 OHM, TSOP, SURFACE MOUNT
NVGS5120PT1G
ActiveON Semiconductor
POWER MOSFET, P CHANNEL, 60 V, 2.5 A, 0.072 OHM, TSOP, SURFACE MOUNT
Description
General part information
NVGS5120PT1G
Automotive Power MOSFET ideal for low power applications. -60V, -2.9A, 111 mΩ, Single P-Channel, TSOP-6, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVGS5120PT1G |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.8 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 18.1 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 942 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | 6-TSOP |
| Power Dissipation (Max) | 600 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 111 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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