Description
General part information
IPTC068N20NM6ATMA1
IPTC068N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. OptiMOS™ 6 200 V was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications. Highest power density can be achieved with the combination of the TOLT package and the OptiMOS™ 6 technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPTC068N20NM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15.2 A |
| Current - Continuous Drain (Id) (Tc) | 140 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On) | 10 V |
| Drive Voltage (Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 107 nC |
| Input Capacitance (Ciss) (Max) | 7300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 16-PowerSOP Module |
| Package Name | PG-HDSOP-16-U04 |
| Power Dissipation (Max) | 3.8 W, 319 W |
| Rds On (Max) | 6.25 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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