Specification	SI4823DY-T1-GE3

Current - Continuous Drain (Id) (Tc)	4.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	660 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.7 W, 2.8 W
Rds On (Max)	108 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

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