Description
General part information
IAUCN08S7N013ATMA1
Infineon introduces its first MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This debut product is offered in our versatile, robust, high current SSO8 5x6mm2SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. IAUCN08S7N013 is a true step forward in the area of power density.
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUCN08S7N013ATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 7 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 116 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 8402 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-53 |
| Power Dissipation (Max) | 219 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 1.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.2 V |
Pricing
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