Specification	BSS84IXUSA1

Current - Continuous Drain (Id) (Ta)	180 mA
Current - Continuous Drain (Id) (Tc)	290 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	0.78 nC, 780 pC
Input Capacitance (Ciss) (Max)	23 pF, 23 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	PG-SOT23-3-U03
Power Dissipation (Max)	400 mW, 960 mW
Rds On (Max)	5.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

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