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NXH010P120MNF1PNG

NXH010P120MNF1PNG

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ON Semiconductor

SIC MODULE - ELITESIC 2-PACK HALF BRIDGE TOPOLOGY, 1200 V, 10 MOHM SIC M1 MOSFET

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NXH010P120MNF1PNG

NXH010P120MNF1PNG

Active
ON Semiconductor

SIC MODULE - ELITESIC 2-PACK HALF BRIDGE TOPOLOGY, 1200 V, 10 MOHM SIC M1 MOSFET

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Description

General part information

NXH010P120MNF1PNG

The NXH010P120MNF1 is a EliteSiC MOSFET module containing a 10 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.

Technical Specifications

Parameters and characteristics for this part

SpecificationNXH010P120MNF1PNG
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Tc)114 A
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Max)454 nC
Input Capacitance (Ciss) (Max)4707 pF
Mounting TypeChassis Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseModule
Power - Max (Tj)250 W
Rds On (Max)14 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max)4.3 V

Pricing

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CAD

3D models and CAD resources for this part