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S3M0030120K

S3M0030120K

Active
SMC Diode Solutions

DIODE MOSFETS SILICON CARBIDES 1

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S3M0030120K

S3M0030120K

Active
SMC Diode Solutions

DIODE MOSFETS SILICON CARBIDES 1

Find alt

Description

General part information

S3M0030120K

DIODE MOSFETS SILICON CARBIDES 1

Technical Specifications

Parameters and characteristics for this part

SpecificationS3M0030120K
Current - Continuous Drain (Id) (Tc)74 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)143 nC
Input Capacitance (Ciss) (Max)2844 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-4
Package NameTO-247-4
Power Dissipation (Max)130 W
Rds On (Max)39 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-4 V
Vgs (Max) Positive18 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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