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NVMFWS016N06CT1G

NVMFWS016N06CT1G

Active
ON Semiconductor

T6 60V SG HIGHER RDS-ON PORTFOLIO/ REEL ROHS COMPLIANT: YES

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NVMFWS016N06CT1G

NVMFWS016N06CT1G

Active
ON Semiconductor

T6 60V SG HIGHER RDS-ON PORTFOLIO/ REEL ROHS COMPLIANT: YES

Find alt

Description

General part information

NVMFWS016N06CT1G

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFWS016N06CT1G
Current - Continuous Drain (Id) (Ta)10 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)6.9 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)489 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads5 Leads
Package Length5 mm
Package Name8-PowerTDFN, 8-SOFL, 5-DFN
Package Width6 mm
Power Dissipation (Max)36 W, 3.4 W
QualificationAEC-Q101
Rds On (Max)15.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources